MOSFET N/P-CH 20V CHIPFET
Dual N/P-Channel MOSFET 20V 2.2A 130mR SMD Product overview: NTHC5513T1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, SMD, 20V, 2.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, SMD, 20V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTHC5513T1G can be used for catalog matching and distributor lookup.
Mosfet Array N and P-Channel 20V 2.9A, 2.2A 1.1W Surface Mount ChipFET™
Manufacturer: ON Semiconductor
Win Source Part Number: 025764-NTHC5513T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: ChipFET
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.9A, 2.2A
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 4nC @ 4.5V
Max Input Capacitance: 180pF @ 10V
Maximum Rds On at Id,Vgs: 80 mOhm @ 2.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
DUAL N/P CHANNEL MOSFET, 20V, 1206A; Transistor Polarity:Complementa
DUAL N/P CHANNEL MOSFET, 20V, 1206A; Transistor Polarity:Complementa
MOSFET 20V +3.9A/-3A Complementary
MOSFET N/P-CH 20V 2.9A CHIPFET
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NTHC5513T1G | 289-NTHC5513T1G | NTHC5513T1GOSTR-ND | 025764-NTHC5513T1G | 09R9651 | NTHC5513T1G | NTHC5513T1G |
| Product Name | FET, MOSFET Arrays | P-Channel Dual SMD 20V MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTHC5513T1G | Dual N/p Channel Mosfet, 20V, 1206A; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; N and P-Channel | P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 2900 milliamps | 3900 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
