N-Channel 1200V 29A (Tc) 170W (Tc) Through Hole TO-247-4L
Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−4L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?4L, 450-TUBE Product overview: NTH4L080N120SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTH4L080N120SC1 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1022276-NTH4L080N120
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 30
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 170W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Vgs (Max): +25V, -15V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 488-NTH4L080N120SC1
Base Product Number: NTH4L080
Drive Voltage (Max Rds On, Min Rds On): 20V
MOSFET, N-CH, 1.2KV, 29A, TO-247 ROHS COMPLIANT: YES
SIC MOSFET, N-CH, 20V, 29A, TO-247; MOSFET Module Configuration:Single
SICFET N-CH 1200V 29A TO247-4
SICFET N-CH 1200V 29A TO247-4
| DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 5556-NTH4L080N120SC1-ND | 2025701 | 2025701P | 278-NTH4L080N120SC1 | 1022276-NTH4L080N120SC1 | 74AH4843 | 91AH8492 | NTH4L080N120SC1 | NTH4L080N120SC1 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | 1200 V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 1.2Kv, 29A, To-247 Rohs Compliant Onsemi | Sic Mosfet, N-Ch, 20V, 29A, To-247; Mosfet Module Configuration Onsemi | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| Transistor Technology / Material | Silicon Carbide | Sic | SiCFET (Silicon Carbide) | ||||||
| Package Type | TO-247; TO-247-4 | TO-247; To-247 | TO-247; TO-247 | TO-247; SOT3 | TO-3; TO-247 | TO-3; TO-247 | TO-247; TO-247-4 | 20V | |
| MOSFET Operating Mode | Enhancement | ||||||||
| Number of units in IC | 1 |
