onsemi Single FETs, MOSFETs NTH4L028N170M1

Description
SIC MOSFET 1700 V 28 MOHM M1 SER
  • Single FETs, MOSFETs - NTH4L028N170M1 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 5556-NTH4L028N170M1-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs - Win Source Electronics
    Win Source Electronics
  • Mosfet, N-Ch, 1.7Kv, 81A, To-247; Mosfet Module Configuration Onsemi - 57AK6417 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTH4L028N170M1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
SIC MOSFET 1700 V 28 MOHM M1 SER
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTH4L028N170M1 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTH4L028N170M1
Single FETs, MOSFETs NTH4L028N170M1
SIC MOSFET 1700 V 28 MOHM M1 SER

SIC MOSFET 1700 V 28 MOHM M1 SER

Supplier's Site Datasheet
Single FETs, MOSFETs - 5556-NTH4L028N170M1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
5556-NTH4L028N170M1-ND
Single FETs, MOSFETs 5556-NTH4L028N170M1-ND
SIC MOSFET 1700 V 28 MOHM M1 SER

SIC MOSFET 1700 V 28 MOHM M1 SER

Buy Now Datasheet
Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Manufacturer: onsemi Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs Package: Tube Product Status: Active FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L

Manufacturer: onsemi
Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
1700 V 28 MOHM MOSFET Transistor
278-NTH4L028N170M1
1700 V 28 MOHM MOSFET Transistor 278-NTH4L028N170M1
SIC MOSFET 1700 V 28 MOHM M1 SER Product overview: NTH4L028N170M1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700 V, 28 MOHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700 V, 28 MOHM, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTH4L028N170M1 can be used for catalog matching and distributor lookup.

SIC MOSFET 1700 V 28 MOHM M1 SER Product overview: NTH4L028N170M1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700 V, 28 MOHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700 V, 28 MOHM, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTH4L028N170M1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 1.7Kv, 81A, To-247; Mosfet Module Configuration Onsemi - 57AK6417 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.7Kv, 81A, To-247; Mosfet Module Configuration Onsemi
57AK6417
Mosfet, N-Ch, 1.7Kv, 81A, To-247; Mosfet Module Configuration Onsemi 57AK6417
MOSFET, N-CH, 1.7KV, 81A, TO-247; MOSFET Module Configuration:Single ; Channel Type:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:1.7kV; No. of Pins:4Pins; Rds(on) Test Voltage:20V; Power Dissipation:535W

MOSFET, N-CH, 1.7KV, 81A, TO-247; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:1.7kV; No. of Pins:4Pins; Rds(on) Test Voltage:20V; Power Dissipation:535W

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTH4L028N170M1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTH4L028N170M1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTH4L028N170M1
SIC MOSFET 1700 V 28 MOHM M1 SER

SIC MOSFET 1700 V 28 MOHM M1 SER

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTH4L028N170M1 5556-NTH4L028N170M1-ND 278-NTH4L028N170M1 57AK6417 NTH4L028N170M1
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs 1700 V 28 MOHM MOSFET Transistor Mosfet, N-Ch, 1.7Kv, 81A, To-247; Mosfet Module Configuration Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 1700 volts 1700 volts
IDSS 81000 milliamps 81000 milliamps
PD 535000 milliwatts 535 milliwatts 535000 milliwatts
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