SIC MOSFET 1700 V 28 MOHM M1 SER
Manufacturer: onsemi
Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
SIC MOSFET 1700 V 28 MOHM M1 SER
SIC MOSFET 1700 V 28 MOHM M1 SER
MOSFET, N-CH, 1.7KV, 81A, TO-247; MOSFET Module Configuration:Single
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 5556-NTH4L028N170M1-ND | NTH4L028N170M1 | NTH4L028N170M1 | 57AK6417 | |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 1.7Kv, 81A, To-247; Mosfet Module Configuration Onsemi |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | |||
| Package Type | TO-247; TO-247-4 | TO-247; SOT3 | TO-247; TO-247-4 | TO-247; TO-247-4L | TO-3; TO-247 |
| V(BR)DSS | 1700 volts |
