Silicon Carbide MOSFET, N‐Channel, 1200 V, 20 mΩ, TO247−4L Silicon Carbide MOSFET, N?Channel, 1200 V, 20 m?, TO247?4L, 450-TUBE Product overview: NTH4L020N120SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTH4L020N120SC1 can be used for catalog matching and distributor lookup.
Manufacturer: onsemi
Win Source Part Number: 1324753-NTH4L020N120
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Power Dissipation (Max): 510W (Tc)
Supplier Device Package: TO-247-4L
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Vgs (Max): +25V, -15V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-247-4
ECCN: EAR99
Fake Threat In the Open Market: 70
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 488-NTH4L020N120SC1
Base Product Number: NTH4L020
Drive Voltage (Max Rds On, Min Rds On): 20V
RoHS Status: ROHS3 Compliant
N-Channel 1200V 102A (Tc) 510W (Tc) Through Hole TO-247-4L
SICFET N-CH 1200V 102A TO247
SICFET N-CH 1200V 102A TO247
MOSFET, N-CH, 1.2KV, 102A, TO-247 ROHS COMPLIANT: YES
SIC MOSFET, N-CH, 20V, 102A, TO-247; MOSFET Module Configuration:Single
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NTH4L020N120SC1 | 1324753-NTH4L020N120SC1 | 5556-NTH4L020N120SC1-ND | NTH4L020N120SC1 | NTH4L020N120SC1 | 74AH4841 | 91AH8490 |
| Product Name | 1200 V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 1.2Kv, 102A, To-247 Rohs Compliant Onsemi | Sic Mosfet, N-Ch, 20V, 102A, To-247; Mosfet Module Configuration Onsemi |
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |||||
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-247; SOT3; TO-247-4 | TO-247; TO-247-4 | TO-247; TO-247-4 | Through Hole | TO-3; TO-247 | TO-3; TO-247 | |
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) |
