onsemi Single FETs, MOSFETs NTGS3447PT1G

Description
P-Channel 12V 3.4A (Ta) 700mW (Ta) Surface Mount 6-TSOP
Request a Quote Datasheet
Description
P-Channel 12V 3.4A (Ta) 700mW (Ta) Surface Mount 6-TSOP
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - NTGS3447PT1G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTGS3447PT1G-ND
Single FETs, MOSFETs NTGS3447PT1G-ND
P-Channel 12V 3.4A (Ta) 700mW (Ta) Surface Mount 6-TSOP

P-Channel 12V 3.4A (Ta) 700mW (Ta) Surface Mount 6-TSOP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTGS3447PT1G - 261085-NTGS3447PT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTGS3447PT1G
261085-NTGS3447PT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTGS3447PT1G 261085-NTGS3447PT1G
Manufacturer: ON Semiconductor Win Source Part Number: 261085-NTGS3447PT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Dimension: SOT-23-6 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 3.4A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 1053pF @ 6V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 40 mOhm @ 4.7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 261085-NTGS3447PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 3.4A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 1053pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 40 mOhm @ 4.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTGS3447PT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTGS3447PT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTGS3447PT1G
MOSFET P-CH 12V 3.4A 6TSOP

MOSFET P-CH 12V 3.4A 6TSOP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTGS3447PT1G-ND 261085-NTGS3447PT1G NTGS3447PT1G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTGS3447PT1G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type SOT23; SOT-23-6 Thin, TSOT-23-6 SOT3; SOT23; 6-TSOP SOT23; SOT-23-6 Thin, TSOT-23-6
V(BR)DSS 12 volts
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