onsemi FET, MOSFET Arrays NTGD3149CT1G

Mosfet Array N and P-Channel 20V 3.2A, 2.4A 900mW Surface Mount 6-TSOP

Manufacturer: ON Semiconductor
Win Source Part Number: 060637-NTGD3149CT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.2A, 2.4A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 5.5nC @ 4.5V
Max Input Capacitance: 387pF @ 10V
Maximum Rds On at Id,Vgs: 60 mOhm @ 3.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Small Signal MOSFET 20V 3.5A 60 mOhm Dual Complementary TSOP-6, TSOP-6, 3000-REEL Product overview: NTGD3149CT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 20V, 3.5A, 60 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 3.5A, 60 mOhm, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTGD3149CT1G can be used for catalog matching and distributor lookup.