onsemi FET, MOSFET Arrays NTGD3133PT1G

Mosfet Array 2 P-Channel (Dual) 20V 1.6A 560mW Surface Mount 6-TSOP

Manufacturer: ON Semiconductor
Win Source Part Number: 060635-NTGD3133PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-TSOP
Maximum Power Dissipation: 560mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.6A
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 5.5nC @ 4.5V
Max Input Capacitance: 400pF @ 10V
Maximum Rds On at Id,Vgs: 145 mOhm @ 2.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Power MOSFET 20V 2.5A 145 mOhm Dual P-Channel TSOP6, TSOP-6, 3000-REEL Product overview: NTGD3133PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 20V, 2.5A, 145 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 2.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTGD3133PT1G can be used for catalog matching and distributor lookup.