P-Channel MOSFET -30V, -5.2A, 100mR, SOT-223 Product overview: NTF5P03T3G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -30V, -5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, -5.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTF5P03T3G can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 3.7A SOT223
P-Channel 30V 3.7A (Ta) 1.56W (Ta) Surface Mount SOT-223 (TO-261)
P-Channel 30V 3.7A (Ta) 1.56W (Ta) Surface Mount SOT-223 (TO-261)
P-Channel 30V 3.7A (Ta) 1.56W (Ta) Surface Mount SOT-223 (TO-261)
Manufacturer: ON Semiconductor
Win Source Part Number: 107369-NTF5P03T3G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.56W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.7A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 950pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 5.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
NTF5P03T3G, PFET SOT223 5.2A 30V TR
NTF5P03T3G, PFET SOT223 5.2A 30V TR
NTF5P03T3G, PFET SOT223 5.2A 30V TR
30V 3.7A 100mΩ@10V,5.2A 1.56W 3V@250uA P Channel SOT-223 MOSFETs ROHS
MOSFET P-CH 30V 3.7A SOT223
MOSFET Transistor, P Channel, 5 A, 30 V, 100 mohm, 10 V, -1.75 V RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, 5.2A, SOT-223, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:3.13W RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, 5.2A, SOT-223; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.75V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
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| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NTF5P03T3G | NTF5P03T3G | NTF5P03T3GOSDKR-ND | 107369-NTF5P03T3G | 8021478P | 8021478 | NTF5P03T3G | NTF5P03T3G | NTF5P03T3G | 58M9900 | 26K5119 | 06R3475 |
| Product Name | P-Channel -30V -5.2A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTF5P03T3G | MOSFETs | MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, P Channel, 5 A, 30 V, 100 Mohm, 10 V, -1.75 V Rohs Compliant Onsemi | P Channel Mosfet, -30V, 5.2A, Sot-223, Full Reel; Channel Type Onsemi | P Channel Mosfet, -30V, 5.2A, Sot-223; Channel Type Onsemi |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||
| PD | 3130 milliwatts | 1560 milliwatts | 1560 milliwatts | 1560 milliwatts | 3130 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts |
