MOSFET N-CH 60V 3A 110mR SOT-223 SMD Product overview: NTF3055-100T1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 60V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 60V, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTF3055-100T1G can be used for catalog matching and distributor lookup.
N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223 (TO-261)
N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223 (TO-261)
N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223 (TO-261)
Manufacturer: ON Semiconductor
Win Source Part Number: 004204-NTF3055-100T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: SOT-223 (TO-261)
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 455pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Motor Drive & Control, Industrial
N CHANNEL MOSFET, 60V, 3A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET, N CH, 60V, 3A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.088ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes
N CHANNEL MOSFET, 60V, 3A, SOT-223, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 60V 3A SOT223
MOSFET, Power;N-Ch;VDSS 68VDC;RDS(ON) 88 Milliohms;ID 3A;SOT-223 (TO-261);-55deg
MOSFET N-CH 60V 3A SOT223
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-NTF3055-100T1G | NTF3055-100T1GOSDKR-ND | 004204-NTF3055-100T1G | 7931055 | 7931055P | 10N9573 | 81Y7038 | NTF3055-100T1G | NTF3055-100T1G | 70100696 | NTF3055-100T1G |
| Product Name | SMD 60V 3A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTF3055-100T1G | MOSFETs | MOSFETs | N Channel Mosfet, 60V, 3A, Sot-223; Channel Type Onsemi | Mosfet, N Ch, 60V, 3A, Sot-223; Transistor Polarity Onsemi | Single FETs, MOSFETs | MOSFET | MOSFET, Power;N-Ch;VDSS 68VDC;RDS(ON) 88 Milliohms;ID 3A;SOT-223 (TO-261);-55deg | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 2100 milliwatts | 1300 milliwatts | 1300 milliwatts | 2.1 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||||
| Package Type | TO-261-4, TO-261AA | SOT3; SOT-223 (TO-261) | SOT223; Sot-223 | SOT223; SOT-223 | TO-3; SOT223 | TO-3; SOT223 | SOT223; TO-261-4, TO-261AA | SOT223 | TO-261-4, TO-261AA | ||
| V(BR)DSS | 60 volts | 60 volts | 68 volts |
