onsemi Single FETs, MOSFETs NTF2955PT1G

Description
P-Channel 60V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)
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Description
P-Channel 60V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - NTF2955PT1G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTF2955PT1G-ND
Single FETs, MOSFETs NTF2955PT1G-ND
P-Channel 60V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)

P-Channel 60V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTF2955PT1G - 1083870-NTF2955PT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTF2955PT1G
1083870-NTF2955PT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTF2955PT1G 1083870-NTF2955PT1G
Manufacturer: ON Semiconductor Win Source Part Number: 1083870-NTF2955PT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.7A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 14.3nC @ 10V Max Input Capacitance: 492pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 185 mOhm @ 2.4A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1083870-NTF2955PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 14.3nC @ 10V
Max Input Capacitance: 492pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 185 mOhm @ 2.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTF2955PT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTF2955PT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTF2955PT1G
MOSFET P-CH 60V 1.7A SOT-223

MOSFET P-CH 60V 1.7A SOT-223

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTF2955PT1G-ND 1083870-NTF2955PT1G NTF2955PT1G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTF2955PT1G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-261-4, TO-261AA SOT3; SOT-223 TO-261-4, TO-261AA
V(BR)DSS 60 volts
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