onsemi Single FETs, MOSFETs NTD70N03RT4G

Description
N-Channel 25V 10A (Ta), 32A (Tc) 1.36W (Ta), 62.5W (Tc) Surface Mount DPAK
Request a Quote Datasheet
Description
N-Channel 25V 10A (Ta), 32A (Tc) 1.36W (Ta), 62.5W (Tc) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTD70N03RT4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD70N03RT4GOSTR-ND
Single FETs, MOSFETs NTD70N03RT4GOSTR-ND
N-Channel 25V 10A (Ta), 32A (Tc) 1.36W (Ta), 62.5W (Tc) Surface Mount DPAK

N-Channel 25V 10A (Ta), 32A (Tc) 1.36W (Ta), 62.5W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD70N03RT4G - 004185-NTD70N03RT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD70N03RT4G
004185-NTD70N03RT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD70N03RT4G 004185-NTD70N03RT4G
Manufacturer: ON Semiconductor Win Source Part Number: 004185-NTD70N03RT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.36W (Ta), 62.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 10A (Ta), 32A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 13.2nC @ 5V Max Input Capacitance: 1333pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 004185-NTD70N03RT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 10A (Ta), 32A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 13.2nC @ 5V
Max Input Capacitance: 1333pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD70N03RT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD70N03RT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD70N03RT4G
MOSFET N-CH 25V 10A/32A DPAK

MOSFET N-CH 25V 10A/32A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTD70N03RT4GOSTR-ND 004185-NTD70N03RT4G NTD70N03RT4G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD70N03RT4G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK 1333 pF @ 20 V
V(BR)DSS 25 volts
Unlock Full Specs
to access all available technical data