onsemi Single FETs, MOSFETs NTD6600NT4G

Description
N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Surface Mount DPAK
Request a Quote Datasheet
Description
N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTD6600NT4G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD6600NT4G-ND
Single FETs, MOSFETs NTD6600NT4G-ND
N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Surface Mount DPAK

N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Surface Mount DPAK

Buy Now Datasheet
Singapore
100V 12A DPAK MOSFET Transistor
278-NTD6600NT4G
100V 12A DPAK MOSFET Transistor 278-NTD6600NT4G
100V N-CH MOSFET, 12A, 146mR, DPAK, Tape & Reel Product overview: NTD6600NT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 12A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 12A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD6600NT4G can be used for catalog matching and distributor lookup.

100V N-CH MOSFET, 12A, 146mR, DPAK, Tape & Reel Product overview: NTD6600NT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 12A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 12A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD6600NT4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD6600NT4G - 209346-NTD6600NT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD6600NT4G
209346-NTD6600NT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD6600NT4G 209346-NTD6600NT4G
Manufacturer: ON Semiconductor Win Source Part Number: 209346-NTD6600NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 12A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 20nC @ 5V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 146 mOhm @ 6A, 5V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 209346-NTD6600NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 20nC @ 5V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 146 mOhm @ 6A, 5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD6600NT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD6600NT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD6600NT4G
MOSFET N-CH 100V 12A DPAK

MOSFET N-CH 100V 12A DPAK

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTD6600NT4G-ND 278-NTD6600NT4G 209346-NTD6600NT4G NTD6600NT4G
Product Name Single FETs, MOSFETs 100V 12A DPAK MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD6600NT4G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
PD 56600 milliwatts 1280 to 56600 milliwatts
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