Manufacturer: ON Semiconductor
Win Source Part Number: 004182-NTD6600N
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 20nC @ 5V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 146 mOhm @ 6A, 5V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
12A, 100V, 0.146ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 Product overview: NTD6600N from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 100V, 0.146ohm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 100V, 0.146ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD6600N can be used for catalog matching and distributor lookup.
N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Surface Mount DPAK
MOSFET N-CH 100V 12A DPAK
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 100V, 0.146OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, DPAK-3, NT 6600G MARKING. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors |
| Product Number | 004182-NTD6600N | 278-NTD6600N | NTD6600N-ND | NTD6600N | 48435200 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD6600N | N-Channel 12A 100V 0.146ohm MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 100 volts | ||||
| PD | 1280 to 56600 milliwatts | 56600 milliwatts |
