onsemi N-Channel 12A 100V 0.146ohm MOSFET Transistor NTD6600N-1G

12A, 100V, 0.146ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369D-01, DPAK-3 Product overview: NTD6600N-1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 100V, 0.146ohm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 100V, 0.146ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD6600N-1G can be used for catalog matching and distributor lookup.

N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Through Hole I-PAK

Manufacturer: ON Semiconductor
Win Source Part Number: 1083854-NTD6600N-1G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 20nC @ 5V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 146 mOhm @ 6A, 5V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance