onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD65N03RG NTD65N03RG

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083852-NTD65N03RG Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 9.5A (Ta), 32A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 16nC @ 5V Max Input Capacitance: 1400pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.4 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Application Field: Used in RF Communications, Industrial
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083852-NTD65N03RG Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 9.5A (Ta), 32A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 16nC @ 5V Max Input Capacitance: 1400pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.4 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Application Field: Used in RF Communications, Industrial
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD65N03RG - 1083852-NTD65N03RG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD65N03RG
1083852-NTD65N03RG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD65N03RG 1083852-NTD65N03RG
Manufacturer: ON Semiconductor Win Source Part Number: 1083852-NTD65N03RG Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 9.5A (Ta), 32A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 16nC @ 5V Max Input Capacitance: 1400pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.4 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Application Field: Used in RF Communications, Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 1083852-NTD65N03RG
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 9.5A (Ta), 32A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 16nC @ 5V
Max Input Capacitance: 1400pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.4 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Application Field: Used in RF Communications, Industrial

Buy Now Datasheet
Singapore
25V 9.5A DPAK MOSFET Transistor
285-NTD65N03RG
25V 9.5A DPAK MOSFET Transistor 285-NTD65N03RG
MOSFET N-CH 25V 9.5A DPAK Product overview: NTD65N03RG from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 9.5A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 9.5A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NTD65N03RG can be used for catalog matching and distributor lookup.

MOSFET N-CH 25V 9.5A DPAK Product overview: NTD65N03RG from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 9.5A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 9.5A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NTD65N03RG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1083852-NTD65N03RG 285-NTD65N03RG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD65N03RG 25V 9.5A DPAK MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 25 volts
PD 1300 to 50000 milliwatts 1300 milliwatts
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