MOSFET N-CH 100V 23A DPAK
Manufacturer: ON Semiconductor
Win Source Part Number: 1083849-NTD6415ANLT4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1024pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 52 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
N-Channel 100V 23A (Tc) 83W (Tc) Surface Mount DPAK
N-Channel 100V 23A (Tc) 83W (Tc) Surface Mount DPAK
N-Channel 100V 23A (Tc) 83W (Tc) Surface Mount DPAK
N-Ch MOSFET, 100V, 23A, 52mΩ, DPAK, Logic Level Product overview: NTD6415ANLT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 23A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 23A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD6415ANLT4G can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 100V, 23A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:23A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 100V 23A DPAK
| ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTD6415ANLT4G | 1083849-NTD6415ANLT4G | 8021030 | 8021030P | NTD6415ANLT4GOSCT-ND | 278-NTD6415ANLT4G | 13AC6211 | NTD6415ANLT4G | NTD6415ANLT4G |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD6415ANLT4G | MOSFETs | MOSFETs | Single FETs, MOSFETs | 100V 23A DPAK MOSFET Transistor | Mosfet, N-Ch, 100V, 23A, To-252; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 100 volts | 100 volts | |||||||
| IDSS | 23000 milliamps | 23000 milliamps | |||||||
| PD | 83000 milliwatts | 83000 milliwatts | 83000 milliwatts |
