N-Channel 25V 8.5A (Ta), 32A (Tc) 1.25W (Ta), 58W (Tc) Through Hole I-Pak
Win Source Part Number: 1081961-NTD60N02R-35
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 75
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 58W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: I-PAK
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): NTD70N03R-001; NTD65N03R-1G; NTD4809NA-1G; IPS090N03LGAKMA1; IPS075N03LGAKMA1;
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: ONSONSNTD60N02R-35G,
Base Product Number: NTD60
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 25V 8.5A/32A IPAK
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NTD60N02R-35G-ND | 1081961-NTD60N02R-35G | NTD60N02R-35G |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |