onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD60N02R-035 NTD60N02R-035

Description
Manufacturer: ON Semiconductor Win Source Part Number: 041970-NTD60N02R-035 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta), 58W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Stub Leads, IPak Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 8.5A (Ta), 32A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 14nC @ 4.5V Max Input Capacitance: 1330pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 041970-NTD60N02R-035 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta), 58W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Stub Leads, IPak Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 8.5A (Ta), 32A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 14nC @ 4.5V Max Input Capacitance: 1330pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD60N02R-035 - 041970-NTD60N02R-035 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD60N02R-035
041970-NTD60N02R-035
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD60N02R-035 041970-NTD60N02R-035
Manufacturer: ON Semiconductor Win Source Part Number: 041970-NTD60N02R-035 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.25W (Ta), 58W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Stub Leads, IPak Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 8.5A (Ta), 32A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 14nC @ 4.5V Max Input Capacitance: 1330pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 041970-NTD60N02R-035
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.25W (Ta), 58W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Stub Leads, IPak
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 8.5A (Ta), 32A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 14nC @ 4.5V
Max Input Capacitance: 1330pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
25V 8.5A MOSFET Transistor
285-NTD60N02R-035
25V 8.5A MOSFET Transistor 285-NTD60N02R-035
MOSFET N-CH 25V 8.5A IPAK Product overview: NTD60N02R-035 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 8.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 8.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NTD60N02R-035 can be used for catalog matching and distributor lookup.

MOSFET N-CH 25V 8.5A IPAK Product overview: NTD60N02R-035 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 8.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 8.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NTD60N02R-035 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 041970-NTD60N02R-035 285-NTD60N02R-035
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD60N02R-035 25V 8.5A MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 25 volts
PD 1250 to 58000 milliwatts 1250 milliwatts
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