N-Channel 60V 20A (Tc) 36W (Tc) Surface Mount DPAK
N-Ch Power MOSFET, 60V, 20A, 39mΩ, DPAK, Logic Level Product overview: NTD5867NLT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 20A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 20A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD5867NLT4G can be used for catalog matching and distributor lookup.
MOSFET N-Channel 60V 20A Logic DPAK
MOSFET N-Channel 60V 20A Logic DPAK
Manufacturer: ON Semiconductor
Win Source Part Number: 1083845-NTD5867NLT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 36W (Tc)
Family Name: NTD5867NL
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 675pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 39 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): STD20NE06T4; STD20NF06L; STD19NE06LT4;
Introduction Date: March 10, 2010
ECCN: EAR99
Country of Origin: Malaysia, United States of America
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
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MOSFET N-CH 60V 20A DPAK
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60V 20A 39mΩ@10V,10A 36W 2.5V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS
MOSFET,N CHANNEL,W DIODE,60V,20A,DPAK; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes
Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTD5867NLT4GOSTR-ND | 278-NTD5867NLT4G | 7192901P | 1245401 | 1083845-NTD5867NLT4G | NTD5867NLT4G | NTD5867NLT4G | NTD5867NLT4G | NTD5867NLT4G | 40T1782 | 598-NTD5867NLT4G |
| Product Name | Single FETs, MOSFETs | 60V 20A DPAK MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5867NLT4G | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet,n Channel,w Diode,60V,20A,dpak; Channel Type Onsemi | Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252 | TO-252 (DPAK); Dpak (to-252) | SOT3; TO-252 (DPAK); DPAK | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK) | TO-3; TO-252 (DPAK) | |||
| PD | 36000 milliwatts | 36000 milliwatts | 36000 milliwatts | 36000 milliwatts | 36000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE |
