onsemi Single FETs, MOSFETs NTD5865NT4G

Description
N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount DPAK
Request a Quote Datasheet
Description
N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - NTD5865NT4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD5865NT4GOSTR-ND
Single FETs, MOSFETs NTD5865NT4GOSTR-ND
N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount DPAK

N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5865NT4G - 1083844-NTD5865NT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5865NT4G
1083844-NTD5865NT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5865NT4G 1083844-NTD5865NT4G
Manufacturer: ON Semiconductor Win Source Part Number: 1083844-NTD5865NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 71W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 43A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 1261pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1083844-NTD5865NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 71W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 43A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 1261pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - NTD5865NT4G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTD5865NT4G
Single FETs, MOSFETs NTD5865NT4G
MOSFET N-CH 60V 43A DPAK

MOSFET N-CH 60V 43A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD5865NT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD5865NT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD5865NT4G
MOSFET N-CH 60V 43A DPAK

MOSFET N-CH 60V 43A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTD5865NT4GOSTR-ND 1083844-NTD5865NT4G NTD5865NT4G NTD5865NT4G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5865NT4G Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 60 volts 60 volts
PD 71000 milliwatts 71000 milliwatts
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