N-Channel MOSFET, 60V, 46A, 16mΩ, DPAK, Logic Level Product overview: NTD5865NLT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 46A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 46A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD5865NLT4G can be used for catalog matching and distributor lookup.
N-Channel 60V 46A (Tc) 71W (Tc) Surface Mount DPAK
MOSFET N-CH 60V 46A DPAK
Manufacturer: ON Semiconductor
Win Source Part Number: 1083842-NTD5865NLT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 71W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 46A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): IRFR3806TRPBF; NP52N06SLG; NP52N06SLG-E2;
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
POWER FIELD-EFFECT TRANSISTOR, 40A I(D), 60V, 0.019OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, DPAK-3. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 60V, 46A, 71W, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:46A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET, N-CH, 60V, 46A, 71W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 46A DPAK
MOSFET Single N-CH 60V 40A
60V 46A 16mΩ@10V,20A 71W 2V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Radwell International | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NTD5865NLT4G | NTD5865NLT4GOSTR-ND | NTD5865NLT4G | 1083842-NTD5865NLT4G | 38837874 | 40T1781 | 85AC2107 | NTD5865NLT4G | NTD5865NLT4G | 598-NTD5865NLT4G | NTD5865NLT4G |
| Product Name | N-Channel 60V 46A DPAK MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5865NLT4G | Transistor | Mosfet, N-Ch, 60V, 46A, 71W, To-252; Channel Type Onsemi | Mosfet, N-Ch, 60V, 46A, 71W, To-252; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET Single N-CH 60V 40A | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||||||
| PD | 52000 milliwatts | 71000 milliwatts | 71000 milliwatts | 52000 milliwatts | 71000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); DPAK | TO-3 | TO-3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON |
