onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5865N-1G NTD5865N-1G

Manufacturer: ON Semiconductor
Win Source Part Number: 1083841-NTD5865N-1G
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 71W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 43A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 1261pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount DPAK

N-Channel Power MOSFET 60V 38A 14mR DPAK Product overview: NTD5865N-1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 38A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 38A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD5865N-1G can be used for catalog matching and distributor lookup.