onsemi Single FETs, MOSFETs NTD5862NT4G

Description
N-Channel 60V 98A (Tc) 115W (Tc) Surface Mount DPAK
Request a Quote Datasheet
Description
N-Channel 60V 98A (Tc) 115W (Tc) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTD5862NT4GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD5862NT4GOSCT-ND
Single FETs, MOSFETs NTD5862NT4GOSCT-ND
N-Channel 60V 98A (Tc) 115W (Tc) Surface Mount DPAK

N-Channel 60V 98A (Tc) 115W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - NTD5862NT4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD5862NT4GOSTR-ND
Single FETs, MOSFETs NTD5862NT4GOSTR-ND
N-Channel 60V 98A (Tc) 115W (Tc) Surface Mount DPAK

N-Channel 60V 98A (Tc) 115W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5862NT4G - 004176-NTD5862NT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5862NT4G
004176-NTD5862NT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5862NT4G 004176-NTD5862NT4G
Manufacturer: ON Semiconductor Win Source Part Number: 004176-NTD5862NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 115W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 98A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 82nC @ 10V Max Input Capacitance: 6000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 004176-NTD5862NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 115W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 98A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 82nC @ 10V
Max Input Capacitance: 6000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.7 mOhm @ 45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - NTD5862NT4G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTD5862NT4G
Single FETs, MOSFETs NTD5862NT4G
POWER FIELD-EFFECT TRANSISTOR, 9

POWER FIELD-EFFECT TRANSISTOR, 9

Supplier's Site Datasheet
Mosfet, N-Ch, 60V, 98A, To-252-3; Transistor Polarity Onsemi - 42AC1823 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 98A, To-252-3; Transistor Polarity Onsemi
42AC1823
Mosfet, N-Ch, 60V, 98A, To-252-3; Transistor Polarity Onsemi 42AC1823
MOSFET, N-CH, 60V, 98A, TO-252-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:98A; On Resistance Rds(on):0.0044ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

MOSFET, N-CH, 60V, 98A, TO-252-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:98A; On Resistance Rds(on):0.0044ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site
Mosfet, N-Ch, 60V, 98A, To-252-3; Transistor Polarity Onsemi - 50AC6483 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 98A, To-252-3; Transistor Polarity Onsemi
50AC6483
Mosfet, N-Ch, 60V, 98A, To-252-3; Transistor Polarity Onsemi 50AC6483
MOSFET, N-CH, 60V, 98A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:98A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0044ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 60V, 98A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:98A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0044ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET NFET DPAK 60V 102A 6MOHM

MOSFET NFET DPAK 60V 102A 6MOHM

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD5862NT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD5862NT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD5862NT4G
MOSFET N-CH 60V 98A DPAK

MOSFET N-CH 60V 98A DPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTD5862NT4GOSCT-ND 004176-NTD5862NT4G NTD5862NT4G 42AC1823 NTD5862NT4G NTD5862NT4G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5862NT4G Single FETs, MOSFETs Mosfet, N-Ch, 60V, 98A, To-252-3; Transistor Polarity Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 60 volts 60 volts
PD 115000 milliwatts 115000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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