MOSFET N-CH 40V 16.4A/101A DPAK
Manufacturer: ON Semiconductor
Win Source Part Number: 004174-NTD5802NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 16.4A (Ta), 101A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 5025pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.4 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
N-Channel 40V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK
N-Channel 40V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK
N-Ch Power MOSFET, 40V, 101A, 4.4mΩ, DPAK Product overview: NTD5802NT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 101A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 101A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD5802NT4G can be used for catalog matching and distributor lookup.
MOSFET N-CH 40V 16.4A/101A DPAK
MOSFET 101A, 40V, 4.2mOhms N-Channel
MOSFET, N-CH, 40V, 101A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:101A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
N CHANNEL MOSFET, 40V, 101A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:101A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTD5802NT4G | 004174-NTD5802NT4G | NTD5802NT4GOSCT-ND | 278-NTD5802NT4G | NTD5802NT4G | NTD5802NT4G | 13AC3883 | 13P5605 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5802NT4G | Single FETs, MOSFETs | 40V 101A DPAK MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 40V, 101A, To-252; Transistor Polarity Onsemi | N Channel Mosfet, 40V, 101A, D-Pak; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 40 volts | 40 volts | ||||||
| IDSS | 16400 milliamps | 101000 milliamps | 101000 milliamps | |||||
| PD | 2500 milliwatts | 2500 to 93750 milliwatts | 93750 milliwatts |
