MOSFET N-CH 40V 16.4A/101A DPAK
Manufacturer: ON Semiconductor
Win Source Part Number: 004174-NTD5802NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 16.4A (Ta), 101A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 5025pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.4 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
N-Channel 40V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK
N-Channel 40V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK
MOSFET, N-CH, 40V, 101A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:101A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
N CHANNEL MOSFET, 40V, 101A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:101A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes
MOSFET 101A, 40V, 4.2mOhms N-Channel
MOSFET N-CH 40V 16.4A/101A DPAK
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NTD5802NT4G | 004174-NTD5802NT4G | NTD5802NT4GOSCT-ND | 13AC3883 | 13P5605 | NTD5802NT4G | NTD5802NT4G |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5802NT4G | Single FETs, MOSFETs | Mosfet, N-Ch, 40V, 101A, To-252; Transistor Polarity Onsemi | N Channel Mosfet, 40V, 101A, D-Pak; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| IDSS | 16400 milliamps | 101000 milliamps | 101000 milliamps | ||||
| PD | 2500 milliwatts | 2500 to 93750 milliwatts |
