onsemi Single FETs, MOSFETs NTD5802NT4G

Description
N-Channel 40V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK
  • Single FETs, MOSFETs - NTD5802NT4GOSCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - NTD5802NT4GOSTR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5802NT4G - 004174-NTD5802NT4G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - NTD5802NT4G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD5802NT4G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 40V, 101A, To-252; Transistor Polarity Onsemi - 13AC3883 - Newark, An Avnet Company
    Newark, An Avnet Company
  • N Channel Mosfet, 40V, 101A, D-Pak; Channel Type Onsemi - 13P5605 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 40V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTD5802NT4GOSCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD5802NT4GOSCT-ND
Single FETs, MOSFETs NTD5802NT4GOSCT-ND
N-Channel 40V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK

N-Channel 40V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - NTD5802NT4GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD5802NT4GOSTR-ND
Single FETs, MOSFETs NTD5802NT4GOSTR-ND
N-Channel 40V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK

N-Channel 40V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5802NT4G - 004174-NTD5802NT4G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5802NT4G
004174-NTD5802NT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5802NT4G 004174-NTD5802NT4G
Manufacturer: ON Semiconductor Win Source Part Number: 004174-NTD5802NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 16.4A (Ta), 101A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 5025pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.4 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 004174-NTD5802NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 16.4A (Ta), 101A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 5025pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.4 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial

Buy Now Datasheet
Single FETs, MOSFETs - NTD5802NT4G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTD5802NT4G
Single FETs, MOSFETs NTD5802NT4G
MOSFET N-CH 40V 16.4A/101A DPAK

MOSFET N-CH 40V 16.4A/101A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD5802NT4G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD5802NT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD5802NT4G
MOSFET N-CH 40V 16.4A/101A DPAK

MOSFET N-CH 40V 16.4A/101A DPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
NTD5802NT4G
MOSFET NTD5802NT4G
MOSFET 101A, 40V, 4.2mOhms N-Channel

MOSFET 101A, 40V, 4.2mOhms N-Channel

Buy Now Datasheet
Mosfet, N-Ch, 40V, 101A, To-252; Transistor Polarity Onsemi - 13AC3883 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 101A, To-252; Transistor Polarity Onsemi
13AC3883
Mosfet, N-Ch, 40V, 101A, To-252; Transistor Polarity Onsemi 13AC3883
MOSFET, N-CH, 40V, 101A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:101A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes

MOSFET, N-CH, 40V, 101A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:101A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
N Channel Mosfet, 40V, 101A, D-Pak; Channel Type Onsemi - 13P5605 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 40V, 101A, D-Pak; Channel Type Onsemi
13P5605
N Channel Mosfet, 40V, 101A, D-Pak; Channel Type Onsemi 13P5605
N CHANNEL MOSFET, 40V, 101A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:101A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

N CHANNEL MOSFET, 40V, 101A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:101A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number NTD5802NT4GOSCT-ND 004174-NTD5802NT4G NTD5802NT4G NTD5802NT4G NTD5802NT4G 13AC3883 13P5605
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5802NT4G Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 40V, 101A, To-252; Transistor Polarity Onsemi N Channel Mosfet, 40V, 101A, D-Pak; Channel Type Onsemi
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 5025 pF @ 25 V TO-3; TO-252 (DPAK) TO-3
V(BR)DSS 40 volts 40 volts
PD 2500 to 93750 milliwatts 2500 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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