onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5414N NTD5414N

Description
Manufacturer: ON Semiconductor Win Source Part Number: 060625-NTD5414N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 24A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 37 mOhm @ 24A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management, Commercial
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 060625-NTD5414N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 24A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 37 mOhm @ 24A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management, Commercial
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5414N - 060625-NTD5414N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5414N
060625-NTD5414N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5414N 060625-NTD5414N
Manufacturer: ON Semiconductor Win Source Part Number: 060625-NTD5414N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 24A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 37 mOhm @ 24A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management, Commercial

Manufacturer: ON Semiconductor
Win Source Part Number: 060625-NTD5414N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 24A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 37 mOhm @ 24A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Commercial

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 060625-NTD5414N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD5414N
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 55000 milliwatts
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