onsemi Single FETs, MOSFETs NTD4979N-35G

N-Channel 30V 9.4A (Ta), 41A (Tc) 1.38W (Ta), 26.3W (Tc) Through Hole I-PAK

POWER, FET Product overview: NTD4979N-35G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD4979N-35G can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 790845-NTD4979N-35G
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-251-3 Short Leads, IPak, TO-251AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 41A (Tc)
Family Name: NTD4979N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: I-Pak
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 16.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 837pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.38W (Ta), 26.3W (Tc)
Rds On (Maximum) @ Id, Vgs: 9 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): CED3100; 2SK3367-A; 2SK4080-S15-AY; 2SK3367;
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: Not Applicable
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited