onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4970N-35G NTD4970N-35G

Manufacturer: ON Semiconductor
Win Source Part Number: 1083828-NTD4970N-35G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.38W (Ta), 24.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Stub Leads, IPak
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.5A (Ta), 36A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 8.2nC @ 4.5V
Max Input Capacitance: 774pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient

Single N-Channel Power MOSFET 30V 36A 11mΩ, 3.5 mm IPAK, Straight Lead, 75-TUBE Product overview: NTD4970N-35G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD4970N-35G can be used for catalog matching and distributor lookup.

N-Channel 30V 8.5A (Ta), 36A (Tc) 1.38W (Ta), 24.6W (Tc) Through Hole I-Pak