Single N-Channel Power MOSFET 30V, 41A, 9mΩ, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL Product overview: NTD4969NT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 30V, 41A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 41A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD4969NT4G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 004173-NTD4969NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.38W (Ta), 26.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.4A (Ta), 41A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 9nC @ 4.5V
Max Input Capacitance: 837pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 30V, 41A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:41A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 30V 9.4A/41A DPAK
MOSFET TRENCH 3.1 30V 9 mOhm NCH
MOSFET N-CH 30V 9.4A/41A DPAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-NTD4969NT4G | 004173-NTD4969NT4G | 13AC6210 | NTD4969NT4G | NTD4969NT4G | NTD4969NT4G |
| Product Name | N-Channel SMD 30V 41A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4969NT4G | Mosfet, N-Ch, 30V, 41A, To-252; Channel Type Onsemi | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| PD | 1380 milliwatts | 1380 to 26300 milliwatts | 1380 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| V(BR)DSS | 30 volts | 30 volts |
