onsemi Single FETs, MOSFETs NTD4963N-35G

Description
N-Channel 30V 8.1A (Ta), 44A (Tc) 1.1W (Ta), 35.7W (Tc) Through Hole I-Pak
Request a Quote Datasheet
Description
N-Channel 30V 8.1A (Ta), 44A (Tc) 1.1W (Ta), 35.7W (Tc) Through Hole I-Pak
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTD4963N-35GOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD4963N-35GOS-ND
Single FETs, MOSFETs NTD4963N-35GOS-ND
N-Channel 30V 8.1A (Ta), 44A (Tc) 1.1W (Ta), 35.7W (Tc) Through Hole I-Pak

N-Channel 30V 8.1A (Ta), 44A (Tc) 1.1W (Ta), 35.7W (Tc) Through Hole I-Pak

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4963N-35G - 1083824-NTD4963N-35G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4963N-35G
1083824-NTD4963N-35G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4963N-35G 1083824-NTD4963N-35G
Manufacturer: ON Semiconductor Win Source Part Number: 1083824-NTD4963N-35G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.1W (Ta), 35.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Stub Leads, IPak Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8.1A (Ta), 44A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 16.2nC @ 10V Max Input Capacitance: 1035pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.6 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1083824-NTD4963N-35G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta), 35.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Stub Leads, IPak
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.1A (Ta), 44A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 16.2nC @ 10V
Max Input Capacitance: 1035pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.6 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
Through-Hole 30V 10A MOSFET Transistor
278-NTD4963N-35G
Through-Hole 30V 10A MOSFET Transistor 278-NTD4963N-35G
N-CH MOSFET 30V 10A TO-251 IPAK Through Hole Product overview: NTD4963N-35G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 30V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD4963N-35G can be used for catalog matching and distributor lookup.

N-CH MOSFET 30V 10A TO-251 IPAK Through Hole Product overview: NTD4963N-35G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 30V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD4963N-35G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD4963N-35G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD4963N-35G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD4963N-35G
MOSFET N-CH 30V 8.1A/44A IPAK

MOSFET N-CH 30V 8.1A/44A IPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTD4963N-35GOS-ND 1083824-NTD4963N-35G 278-NTD4963N-35G NTD4963N-35G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4963N-35G Through-Hole 30V 10A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Stub Leads, IPAK SOT3; I-Pak TO-251-3 Stub Leads, IPak
V(BR)DSS 30 volts 30 volts
PD 1100 to 35700 milliwatts 1640 milliwatts
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