N-Ch Power MOSFET, 30V, 8mR, 12.1A, DPAK, SMT Product overview: NTD4909NT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12.1A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12.1A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD4909NT4G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 093869-NTD4909NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.37W (Ta), 29.4W (Tc)
Family Name: NTD4909N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.8A (Ta), 41A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 17.5nC @ 10V
Max Input Capacitance: 1314pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): DMG8880LK3-13; SUD50N03-10; SUD50N03-10-T4; SUD50N03-10-E3;
Introduction Date: June 01, 2009
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 8.8A/41A DPAK
MOSFET, N-CH, 30V, 41A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:41A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; MSL:- RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NTD4909NT4G | 093869-NTD4909NT4G | NTD4909NT4G | 13AC6208 |
| Product Name | 30V 12.1A DPAK MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4909NT4G | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 41A, To-252; Channel Type Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| PD | 29400 milliwatts | 1370 to 29400 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||
| V(BR)DSS | 30 volts |
