onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4906N-35G NTD4906N-35G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 209341-NTD4906N-35G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Stub Leads, IPak Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.3A (Ta), 54A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 1932pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 209341-NTD4906N-35G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Stub Leads, IPak Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.3A (Ta), 54A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 1932pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4906N-35G - 209341-NTD4906N-35G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4906N-35G
209341-NTD4906N-35G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4906N-35G 209341-NTD4906N-35G
Manufacturer: ON Semiconductor Win Source Part Number: 209341-NTD4906N-35G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Stub Leads, IPak Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.3A (Ta), 54A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 1932pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 209341-NTD4906N-35G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Stub Leads, IPak
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10.3A (Ta), 54A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 1932pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - NTD4906N-35GOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD4906N-35GOS-ND
Single FETs, MOSFETs NTD4906N-35GOS-ND
N-Channel 30V 10.3A (Ta), 54A (Tc) 1.38W (Ta), 37.5W (Tc) Through Hole I-Pak

N-Channel 30V 10.3A (Ta), 54A (Tc) 1.38W (Ta), 37.5W (Tc) Through Hole I-Pak

Buy Now Datasheet
Singapore
N-Channel 30V 54A 5.5 mOhm MOSFET Transistor
278-NTD4906N-35G
N-Channel 30V 54A 5.5 mOhm MOSFET Transistor 278-NTD4906N-35G
Power MOSFET 30V 54A 5.5 mOhm Single N-Channel DPAK, 3.5 mm IPAK, Straight Lead, 75-TUBE Product overview: NTD4906N-35G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 54A, 5.5 mOhm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 54A, 5.5 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD4906N-35G can be used for catalog matching and distributor lookup.

Power MOSFET 30V 54A 5.5 mOhm Single N-Channel DPAK, 3.5 mm IPAK, Straight Lead, 75-TUBE Product overview: NTD4906N-35G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 54A, 5.5 mOhm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 54A, 5.5 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD4906N-35G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET NFET DPAK 30V 54A 5.5 mOhm - 598-NTD4906N-35G - Utmel Electronic Limited
Hong Kong, China
MOSFET NFET DPAK 30V 54A 5.5 mOhm
598-NTD4906N-35G
MOSFET NFET DPAK 30V 54A 5.5 mOhm 598-NTD4906N-35G
MOSFET NFET DPAK 30V 54A 5.5 mOhm

MOSFET NFET DPAK 30V 54A 5.5 mOhm

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD4906N-35G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD4906N-35G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD4906N-35G
MOSFET N-CH 30V 10.3A/54A IPAK

MOSFET N-CH 30V 10.3A/54A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 209341-NTD4906N-35G NTD4906N-35GOS-ND 278-NTD4906N-35G 598-NTD4906N-35G NTD4906N-35G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4906N-35G Single FETs, MOSFETs N-Channel 30V 54A 5.5 mOhm MOSFET Transistor MOSFET NFET DPAK 30V 54A 5.5 mOhm Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 1380 to 37500 milliwatts 37500 milliwatts 2600 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
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