onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4906N-1G NTD4906N-1G

Manufacturer: ON Semiconductor
Win Source Part Number: 1083817-NTD4906N-1G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.38W (Ta), 37.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10.3A (Ta), 54A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 1932pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Power MOSFET 30V 54A 5.5 mOhm Single N-Channel DPAK, DPAK INSERTION MOUNT, 75-TUBE Product overview: NTD4906N-1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 54A, 5.5 mOhm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 54A, 5.5 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD4906N-1G can be used for catalog matching and distributor lookup.

N-Channel 30V 10.3A (Ta), 54A (Tc) 1.38W (Ta), 37.5W (Tc) Through Hole I-PAK