Manufacturer: ON Semiconductor
Win Source Part Number: 060618-NTD4860NAT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 10.4A (Ta), 65A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 16.5nC @ 4.5V
Max Input Capacitance: 1308pF @ 12V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
MOSFET N-CH 25V 10.4A DPAK Product overview: NTD4860NAT4G from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 10.4A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 10.4A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NTD4860NAT4G can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 060618-NTD4860NAT4G | 285-NTD4860NAT4G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4860NAT4G | 25V 10.4A DPAK MOSFET Transistor |
| Polarity | N-Channel; N-Channel | N-Channel |
| V(BR)DSS | 25 volts | |
| PD | 1280 to 50000 milliwatts | 1280 milliwatts |