Manufacturer: ON Semiconductor
Win Source Part Number: 060614-NTD4856NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 13.3A (Ta), 89A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 27nC @ 4.5V
Max Input Capacitance: 2241pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient
N-Channel 25V 13.3A (Ta), 89A (Tc) 1.33W (Ta), 60W (Tc) Surface Mount DPAK
MOSFET N-CH 25V 13.3A/89A DPAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 060614-NTD4856NT4G | NTD4856NT4G-ND | NTD4856NT4G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4856NT4G | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 25 volts | ||
| PD | 1330 to 60000 milliwatts |
