Power MOSFET 25V 89A 4.7 mOhm Single N-Channel DPAK, DPAK INSERTION MOUNT, 75-TUBE Product overview: NTD4856N-1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 25V, 89A, 4.7 mOhm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 89A, 4.7 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD4856N-1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 1083806-NTD4856N-1G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 13.3A (Ta), 89A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 27nC @ 4.5V
Max Input Capacitance: 2241pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
N-Channel 25V 13.3A (Ta), 89A (Tc) 1.33W (Ta), 60W (Tc) Through Hole I-PAK
MOSFET N-CH 25V 13.3A IPAK
MOSFET N-CH 25V 13.3A/89A IPAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-NTD4856N-1G | 1083806-NTD4856N-1G | NTD4856N-1G-ND | 598-NTD4856N-1G | NTD4856N-1G |
| Product Name | N-Channel 25V 89A 4.7 mOhm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4856N-1G | Single FETs, MOSFETs | MOSFET N-CH 25V 13.3A IPAK | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 60000 milliwatts | 1330 to 60000 milliwatts | 2140 milliwatts | ||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| V(BR)DSS | 25 volts | 25 volts | |||
| Package Type | SOT3; I-Pak | TO-251-3 Short Leads, IPAK, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
