onsemi Single FETs, MOSFETs NTD4815NHT4G

Description
N-Channel 30V 6.9A (Ta), 35A (Tc) 1.26W (Ta), 32.6W (Tc) Surface Mount DPAK
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Description
N-Channel 30V 6.9A (Ta), 35A (Tc) 1.26W (Ta), 32.6W (Tc) Surface Mount DPAK
Request a Quote Datasheet

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Single FETs, MOSFETs - NTD4815NHT4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD4815NHT4GOSTR-ND
Single FETs, MOSFETs NTD4815NHT4GOSTR-ND
N-Channel 30V 6.9A (Ta), 35A (Tc) 1.26W (Ta), 32.6W (Tc) Surface Mount DPAK

N-Channel 30V 6.9A (Ta), 35A (Tc) 1.26W (Ta), 32.6W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4815NHT4G - 1083803-NTD4815NHT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4815NHT4G
1083803-NTD4815NHT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4815NHT4G 1083803-NTD4815NHT4G
Manufacturer: ON Semiconductor Win Source Part Number: 1083803-NTD4815NHT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.9A (Ta), 35A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 6.8nC @ 4.5V Max Input Capacitance: 845pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1083803-NTD4815NHT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.9A (Ta), 35A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 6.8nC @ 4.5V
Max Input Capacitance: 845pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD4815NHT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD4815NHT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD4815NHT4G
MOSFET N-CH 30V 6.9A/35A DPAK

MOSFET N-CH 30V 6.9A/35A DPAK

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTD4815NHT4GOSTR-ND 1083803-NTD4815NHT4G NTD4815NHT4G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4815NHT4G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK 845 pF @ 12 V
V(BR)DSS 30 volts
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