Manufacturer: ON Semiconductor
Win Source Part Number: 060606-NTD4809NAT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.6A (Ta), 58A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 13nC @ 4.5V
Max Input Capacitance: 1456pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
N-Channel 30V 9.6A (Ta), 58A (Tc) 1.3W (Ta), 52W (Tc) Surface Mount DPAK
MOSFET N-CH 30V 9A DPAK
MOSFET N-CH 30V 9.6A/58A DPAK
MOSFET N-CH 30V 9A DPAK
| Win Source Electronics | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 060606-NTD4809NAT4G | NTD4809NAT4G-ND | NTD4809NAT4G | NTD4809NAT4G | 598-NTD4809NAT4G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4809NAT4G | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 30V 9A DPAK | |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | ||||
| PD | 1300 to 52000 milliwatts | 1300 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
