MOSFET N-CH 30V 11.3A/79A DPAK
N-Channel 30V 11.3A (Ta), 79A (Tc) 1.4W (Ta), 68W (Tc) Surface Mount DPAK
N-Channel Power MOSFET 30V 79A 6mR DPAK Product overview: NTD4806NT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 79A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 79A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD4806NT4G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 004162-NTD4806NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
Family Name: NTD4806N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11.3A (Ta), 79A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 23nC @ 4.5V
Max Input Capacitance: 2142pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): TSM60N03CP ROG; DMN3005LK3-13; SUD50N03-07-T4; SUD50N03-07;
Introduction Date: November 16, 2005
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 30V, 0.0094OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, DPAK-3. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 30V 11.3A/79A DPAK
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | NTD4806NT4G | NTD4806NT4GOSTR-ND | 278-NTD4806NT4G | 004162-NTD4806NT4G | 32326241 | NTD4806NT4G |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 30V 79A DPAK MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4806NT4G | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| IDSS | 11300 milliamps |