onsemi Transistor NTD4806NT4G

Description
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 30V, 0.0094OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, DPAK-3. FREE 2 YEAR RADWELL WARRANTY
  • Transistor - 32326241 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - NTD4806NT4GOSTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - NTD4806NT4G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4806NT4G - 004162-NTD4806NT4G - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD4806NT4G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 30V, 0.0094OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, DPAK-3. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor - 32326241 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
32326241
Transistor 32326241
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 30V, 0.0094OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, DPAK-3. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 30V, 0.0094OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, DPAK-3. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - NTD4806NT4GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD4806NT4GOSTR-ND
Single FETs, MOSFETs NTD4806NT4GOSTR-ND
N-Channel 30V 11.3A (Ta), 79A (Tc) 1.4W (Ta), 68W (Tc) Surface Mount DPAK

N-Channel 30V 11.3A (Ta), 79A (Tc) 1.4W (Ta), 68W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - NTD4806NT4G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTD4806NT4G
Single FETs, MOSFETs NTD4806NT4G
MOSFET N-CH 30V 11.3A/79A DPAK

MOSFET N-CH 30V 11.3A/79A DPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4806NT4G - 004162-NTD4806NT4G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4806NT4G
004162-NTD4806NT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4806NT4G 004162-NTD4806NT4G
Manufacturer: ON Semiconductor Win Source Part Number: 004162-NTD4806NT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.4W (Ta), 68W (Tc) Family Name: NTD4806N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11.3A (Ta), 79A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 23nC @ 4.5V Max Input Capacitance: 2142pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): TSM60N03CP ROG; DMN3005LK3-13; SUD50N03-07-T4; SUD50N03-07; Introduction Date: November 16, 2005 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 004162-NTD4806NT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
Family Name: NTD4806N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11.3A (Ta), 79A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 23nC @ 4.5V
Max Input Capacitance: 2142pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): TSM60N03CP ROG; DMN3005LK3-13; SUD50N03-07-T4; SUD50N03-07;
Introduction Date: November 16, 2005
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD4806NT4G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD4806NT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD4806NT4G
MOSFET N-CH 30V 11.3A/79A DPAK

MOSFET N-CH 30V 11.3A/79A DPAK

Supplier's Site

Technical Specifications

  Radwell International DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 32326241 NTD4806NT4GOSTR-ND NTD4806NT4G 004162-NTD4806NT4G NTD4806NT4G
Product Name Transistor Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD4806NT4G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
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