onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD32N06T4G NTD32N06T4G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083785-NTD32N06T4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 32A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1725pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083785-NTD32N06T4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 32A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1725pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

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Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD32N06T4G - 1083785-NTD32N06T4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD32N06T4G
1083785-NTD32N06T4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD32N06T4G 1083785-NTD32N06T4G
Manufacturer: ON Semiconductor Win Source Part Number: 1083785-NTD32N06T4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 32A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1725pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1083785-NTD32N06T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 32A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1725pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - NTD32N06T4GOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD32N06T4GOS-ND
Single FETs, MOSFETs NTD32N06T4GOS-ND
N-Channel 60V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Surface Mount DPAK

N-Channel 60V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Surface Mount DPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD32N06T4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD32N06T4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD32N06T4G
MOSFET N-CH 60V 32A DPAK

MOSFET N-CH 60V 32A DPAK

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1083785-NTD32N06T4G NTD32N06T4GOS-ND NTD32N06T4G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD32N06T4G Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts
PD 1500 to 93750 milliwatts
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