onsemi Single FETs, MOSFETs NTD32N06LT4G

Description
N-Channel 60V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Surface Mount DPAK
Request a Quote Datasheet
Description
N-Channel 60V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTD32N06LT4GOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD32N06LT4GOS-ND
Single FETs, MOSFETs NTD32N06LT4GOS-ND
N-Channel 60V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Surface Mount DPAK

N-Channel 60V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - NTD32N06LT4G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTD32N06LT4G
Single FETs, MOSFETs NTD32N06LT4G
MOSFET N-CH 60V 32A DPAK

MOSFET N-CH 60V 32A DPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD32N06LT4G - 1083784-NTD32N06LT4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD32N06LT4G
1083784-NTD32N06LT4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD32N06LT4G 1083784-NTD32N06LT4G
Manufacturer: ON Semiconductor Win Source Part Number: 1083784-NTD32N06LT4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 32A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 50nC @ 5V Max Input Capacitance: 1700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 28 mOhm @ 16A, 5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1083784-NTD32N06LT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 32A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 50nC @ 5V
Max Input Capacitance: 1700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 28 mOhm @ 16A, 5V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD32N06LT4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD32N06LT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD32N06LT4G
MOSFET N-CH 60V 32A DPAK

MOSFET N-CH 60V 32A DPAK

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTD32N06LT4GOS-ND NTD32N06LT4G 1083784-NTD32N06LT4G NTD32N06LT4G
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD32N06LT4G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
Unlock Full Specs
to access all available technical data