onsemi Single FETs, MOSFETs NTD3055L104G

Description
MOSFET N-CH 60V 12A DPAK
Request a Quote Datasheet
Description
MOSFET N-CH 60V 12A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTD3055L104G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTD3055L104G
Single FETs, MOSFETs NTD3055L104G
MOSFET N-CH 60V 12A DPAK

MOSFET N-CH 60V 12A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - NTD3055L104GOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD3055L104GOS-ND
Single FETs, MOSFETs NTD3055L104GOS-ND
N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Surface Mount DPAK

N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Surface Mount DPAK

Buy Now Datasheet
Singapore
60V 12A DPAK MOSFET Transistor
278-NTD3055L104G
60V 12A DPAK MOSFET Transistor 278-NTD3055L104G
N-Ch MOSFET, 60V, 12A, 104mR, DPAK Product overview: NTD3055L104G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 12A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 12A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD3055L104G can be used for catalog matching and distributor lookup.

N-Ch MOSFET, 60V, 12A, 104mR, DPAK Product overview: NTD3055L104G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 12A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 12A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD3055L104G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD3055L104G - 1083776-NTD3055L104G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD3055L104G
1083776-NTD3055L104G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD3055L104G 1083776-NTD3055L104G
Manufacturer: ON Semiconductor Win Source Part Number: 1083776-NTD3055L104G Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 12A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 20nC @ 5V Max Input Capacitance: 440pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 104 mOhm @ 6A, 5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1083776-NTD3055L104G
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta), 48W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 20nC @ 5V
Max Input Capacitance: 440pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 104 mOhm @ 6A, 5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Transistor - 18721645 - Radwell International
Willingboro, NJ, United States
Transistor
18721645
Transistor 18721645
N CHANNEL MOSFET, 60V, 12A, D-PAK; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:12A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.104OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:1.6V; PRODUCT RANGE:-ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 60V, 12A, D-PAK; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:12A; DRAIN SOURCE VOLTAGE VDS:60V; ON RESISTANCE RDS(ON):0.104OHM; RDS(ON) TEST VOLTAGE VGS:5V; THRESHOLD VOLTAGE VGS:1.6V; PRODUCT RANGE:-ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD3055L104G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD3055L104G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD3055L104G
MOSFET N-CH 60V 12A DPAK

MOSFET N-CH 60V 12A DPAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number NTD3055L104G NTD3055L104GOS-ND 278-NTD3055L104G 1083776-NTD3055L104G 18721645 NTD3055L104G
Product Name Single FETs, MOSFETs Single FETs, MOSFETs 60V 12A DPAK MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD3055L104G Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 12000 milliamps
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