P-Channel MOSFET -60V, -12A, 180mΩ, DPAK Product overview: NTD2955T4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, -12A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -12A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD2955T4G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 004150-NTD2955T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 55W (Tj)
Family Name: NTD2955
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 750pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 180 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): STD2955T4G; NVD2955T4G; SVD2955T4G; STD10PF06;
Introduction Date: July 17, 2003
ECCN: EAR99
Country of Origin: China, Czech Republic, Japan, Malaysia, United States of America, Vietnam
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Motor Drive & Control
P-Channel 60V 12A (Ta) 55W (Tj) Surface Mount DPAK
P-Channel 60V 12A (Ta) 55W (Tj) Surface Mount DPAK
P-Channel 60V 12A (Ta) 55W (Tj) Surface Mount DPAK
P CHANNEL MOSFET, -60V, 12A, D-PAK; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
P CHANNEL MOSFET, -60V, 12A, D-PAK, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8VRoHS Compliant: Yes
MOSFET P-CH 60V 12A DPAK
MOSFET P-CH 60V 12A DPAK
TRANSISTOR, POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 60V, 0.18OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-O-XIDE FET, DPACK CASE 369C, SURFACE MOUNT. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-NTD2955T4G | 463038 | 463038P | 004150-NTD2955T4G | NTD2955T4GOSTR-ND | 10N9570 | NTD2955T4G | NTD2955T4G | NTD2955T4G | 18721869 |
| Product Name | P-Channel -60V -12A DPAK MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD2955T4G | Single FETs, MOSFETs | P Channel Mosfet, -60V, 12A, D-Pak; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Transistor |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| PD | 55000 milliwatts | 55000 milliwatts | 55000 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||||
| MOSFET Operating Mode | Enhancement | |||||||||
| Package Type | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252 | SOT3; TO-252 (DPAK); DPAK | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
