N-Channel 60V 24A (Ta) 1.36W (Ta), 62.5W (Tj) Surface Mount DPAK
MOSFET N-CH 60V 24A DPAK
Manufacturer: ON Semiconductor
Win Source Part Number: 004147-NTD24N06T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 24A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 42 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
N-Ch MOSFET, 60V, 24A, 42mΩ, DPAK Product overview: NTD24N06T4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 24A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 24A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD24N06T4G can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 24A DPAK
(PRICE/TC),MOSFET, N-CH, 60V, 27A, TO-252, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:27A, DRAIN SOURCE VOLTAGE VDS:60V, ON RESISTANCE RDS(ON):0.032OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:4V, POWER DISSIPATION ROHS COMPLIA. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 60V, 27A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTD24N06T4GOSTR-ND | NTD24N06T4G | 004147-NTD24N06T4G | 278-NTD24N06T4G | NTD24N06T4G | 32326193 | 50AC6478 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD24N06T4G | 60V 24A DPAK MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | Mosfet, N-Ch, 60V, 27A, To-252; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); DPAK | 1200 pF @ 25 V | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| IDSS | 24000 milliamps | 27000 milliamps |
