onsemi Single FETs, MOSFETs NTD24N06T4G

Description
MOSFET N-CH 60V 24A DPAK
  • Single FETs, MOSFETs - NTD24N06T4G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD24N06T4G - 004147-NTD24N06T4G - Win Source Electronics
    Win Source Electronics
  • Transistor - 32326193 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - NTD24N06T4GOSTR-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 60V, 27A, To-252; Transistor Polarity Onsemi - 50AC6478 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD24N06T4G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 60V 24A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTD24N06T4G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTD24N06T4G
Single FETs, MOSFETs NTD24N06T4G
MOSFET N-CH 60V 24A DPAK

MOSFET N-CH 60V 24A DPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD24N06T4G - 004147-NTD24N06T4G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD24N06T4G
004147-NTD24N06T4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD24N06T4G 004147-NTD24N06T4G
Manufacturer: ON Semiconductor Win Source Part Number: 004147-NTD24N06T4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 24A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 42 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 004147-NTD24N06T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 24A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 42 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Transistor - 32326193 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
32326193
Transistor 32326193
(PRICE/TC),MOSFET, N-CH, 60V, 27A, TO-252, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:27A, DRAIN SOURCE VOLTAGE VDS:60V, ON RESISTANCE RDS(ON):0.032OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:4V, POWER DISSIPATION ROHS COMPLIA. FREE 2 YEAR RADWELL WARRANTY

(PRICE/TC),MOSFET, N-CH, 60V, 27A, TO-252, TRANSISTOR POLARITY:N CHANNEL, CONTINUOUS DRAIN CURRENT ID:27A, DRAIN SOURCE VOLTAGE VDS:60V, ON RESISTANCE RDS(ON):0.032OHM, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:4V, POWER DISSIPATION ROHS COMPLIA. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - NTD24N06T4GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTD24N06T4GOSTR-ND
Single FETs, MOSFETs NTD24N06T4GOSTR-ND
N-Channel 60V 24A (Ta) 1.36W (Ta), 62.5W (Tj) Surface Mount DPAK

N-Channel 60V 24A (Ta) 1.36W (Ta), 62.5W (Tj) Surface Mount DPAK

Buy Now Datasheet
Mosfet, N-Ch, 60V, 27A, To-252; Transistor Polarity Onsemi - 50AC6478 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 60V, 27A, To-252; Transistor Polarity Onsemi
50AC6478
Mosfet, N-Ch, 60V, 27A, To-252; Transistor Polarity Onsemi 50AC6478
MOSFET, N-CH, 60V, 27A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 60V, 27A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTD24N06T4G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTD24N06T4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTD24N06T4G
MOSFET N-CH 60V 24A DPAK

MOSFET N-CH 60V 24A DPAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Radwell International DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTD24N06T4G 004147-NTD24N06T4G 32326193 NTD24N06T4GOSTR-ND 50AC6478 NTD24N06T4G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD24N06T4G Transistor Single FETs, MOSFETs Mosfet, N-Ch, 60V, 27A, To-252; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 24000 milliamps 27000 milliamps
PD 1360 milliwatts 1360 to 62500 milliwatts
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