onsemi Single FETs, MOSFETs NTD23N03R-1G

N-Channel 25V 3.8A (Ta), 17.1A (Tc) 1.14W (Ta), 22.3W (Tc) Through Hole I-PAK

Manufacturer: ON Semiconductor
Win Source Part Number: 1083765-NTD23N03R-1G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.14W (Ta), 22.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 3.8A (Ta), 17.1A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 3.76nC @ 4.5V
Max Input Capacitance: 225pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

MOSFET N-CH 25V 3.8A IPAK Product overview: NTD23N03R-1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 3.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 3.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD23N03R-1G can be used for catalog matching and distributor lookup.