MOSFET N-CH 25V 2.5A DPAK
N-Channel 25V 2.5A (Ta) 1.04W (Ta), 20.8W (Tc) Surface Mount DPAK
N-Channel 25V 2.5A (Ta) 1.04W (Ta), 20.8W (Tc) Surface Mount DPAK
N-Channel 25V 2.5A (Ta) 1.04W (Ta), 20.8W (Tc) Surface Mount DPAK
N-Ch MOSFET, 25V, 14A, 95mΩ, DPAK Product overview: NTD14N03RT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 14A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 14A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD14N03RT4G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 004139-NTD14N03RT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
Family Name: NTD14N03R
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 2.5A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 1.8nC @ 5V
Max Input Capacitance: 115pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 95 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): AP12L02H; SSD3055LA; NTD14N03RG;
Introduction Date: January 29, 2003
ECCN: EAR99
Country of Origin: China, Malaysia , Vietnam , United States of America
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
N CHANNEL MOSFET, 25V, 14A, D-PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:14A; On Resistance Rds(on):0.095ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET, N-CH, 25V, 14A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0704ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes
N CHANNEL MOSFET, 25V, 14A, D-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:14A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
MOSFET N-CH 25V 2.5A DPAK
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NTD14N03RT4G | NTD14N03RT4GOSCT-ND | 278-NTD14N03RT4G | 004139-NTD14N03RT4G | 09R9638 | 13AC3879 | 83H7804 | NTD14N03RT4G | NTD14N03RT4G |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 25V 14A DPAK MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD14N03RT4G | N Channel Mosfet, 25V, 14A, D-Pak; Transistor Polarity Onsemi | Mosfet, N-Ch, 25V, 14A, To-252; Transistor Polarity Onsemi | N Channel Mosfet, 25V, 14A, D-Pak, Full Reel; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 25 volts | 25 volts | |||||||
| IDSS | 2500 milliamps | 14000 milliamps | 14000 milliamps | 14000 milliamps | |||||
| PD | 1040 milliwatts | 1040 milliwatts | 1040 to 20800 milliwatts |