onsemi Single FETs, MOSFETs NTD110N02RT4G

MOSFET N-CH 24V 12.5A/110A DPAK

N-Channel 24V 12.5A (Ta), 110A (Tc) 1.5W (Ta), 110W (Tc) Surface Mount DPAK

N-Channel Power MOSFET 24V 110A 4.6mR DPAK SM Product overview: NTD110N02RT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 24V, 110A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 24V, 110A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTD110N02RT4G can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 004136-NTD110N02RT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 24V
Continuous Drain Current at 25°C: 12.5A (Ta), 110A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 28nC @ 4.5V
Max Input Capacitance: 3440pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.6 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance