MOSFET N-CH 24V 12.5A/110A DPAK
Manufacturer: ON Semiconductor
Win Source Part Number: 004136-NTD110N02RT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 24V
Continuous Drain Current at 25°C: 12.5A (Ta), 110A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 28nC @ 4.5V
Max Input Capacitance: 3440pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.6 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
N-Channel 24V 12.5A (Ta), 110A (Tc) 1.5W (Ta), 110W (Tc) Surface Mount DPAK
MOSFET N-CH 24V 12.5A/110A DPAK
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTD110N02RT4G | 004136-NTD110N02RT4G | NTD110N02RT4GOSTR-ND | NTD110N02RT4G | NTD110N02RT4G |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTD110N02RT4G | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 24 volts | 24 volts | |||
| IDSS | 12500 milliamps |
