SIC MOSFET 1700 V 28 MOHM M1 SER
SIC MOSFET 1700 V 28 MOHM M1 SER
SIC MOSFET 1700 V 28 MOHM M1 SER
SIC MOSFET 1700 V 28 MOHM M1 SER
Manufacturer: onsemi
Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Package: Tape & Reel (TR) Cut Tape (CT)
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
MOSFET, N-CH, 1.7KV, 71A, TO-263; MOSFET Module Configuration:Single
SIC MOSFET 1700 V 28 MOHM M1 SER
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NTBG028N170M1 | 5556-NTBG028N170M1TR-ND | 57AK6404 | NTBG028N170M1 | |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs | Mosfet, N-Ch, 1.7Kv, 71A, To-263; Mosfet Module Configuration Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | |||
| V(BR)DSS | 1700 volts | ||||
| IDSS | 71000 milliamps | 71000 milliamps |
