onsemi Single FETs, MOSFETs NTBG022N120M3S

SIC MOSFET 1200 V 22 MOHM M3S SE

SIC MOSFET 1200 V 22 MOHM M3S SE

SIC MOSFET 1200 V 22 MOHM M3S SE

SIC MOSFET 1200 V 22 MOHM M3S SE Product overview: NTBG022N120M3S from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V, 22 MOHM. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, 22 MOHM, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTBG022N120M3S can be used for catalog matching and distributor lookup.

Win Source Part Number: 1337049-NTBG022N120M3S
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Standard Package: 800
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Power Dissipation (Max): 234W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab) , TO-263CA
Supplier Device Package: D2PAK-7
Vgs (Max): +22V, -10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 34 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: NTBG022
Drive Voltage (Max Rds On, Min Rds On): 18V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V

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