SICFET N-CH 1200V 8.6A/98A D2PAK
Manufacturer: onsemi
Win Source Part Number: 1324748-NTBG020N120S
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 800
Mounting: Surface Mount
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 8.6A, 98A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Power Dissipation (Max): 3.7W, 468W (Tc)
Supplier Device Package: D2PAK-7
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
Vgs (Max): +25V, -15V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
ECCN: EAR99
Fake Threat In the Open Market: 71
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 488-NTBG020N120SC1CT
Base Product Number: NTBG020
Drive Voltage (Max Rds On, Min Rds On): 20V
RoHS Status: ROHS3 Compliant
N-Channel 1200V 8.6A (Ta), 98A (Tc) 3.7W (Ta), 468W (Tc) Surface Mount D2PAK-7
N-Channel 1200V 8.6A (Ta), 98A (Tc) 3.7W (Ta), 468W (Tc) Surface Mount D2PAK-7
N-Channel 1200V 8.6A (Ta), 98A (Tc) 3.7W (Ta), 468W (Tc) Surface Mount D2PAK-7
SiC MOSFET, N-Ch, 1200V, 20mΩ, D2PAK-7L Product overview: NTBG020N120SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTBG020N120SC1 can be used for catalog matching and distributor lookup.
SICFET N-CH 1200V 8.6A/98A D2PAK
MOSFET, N-CH, 1.2KV, 98A, 175DEG C, 468W ROHS COMPLIANT: YES
SIC MOSFET, N-CH, 20V, 98A, TO-263; MOSFET Module Configuration:Single
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTBG020N120SC1 | 1324748-NTBG020N120SC1 | 5556-NTBG020N120SC1CT-ND | 278-NTBG020N120SC1 | NTBG020N120SC1 | 54AH9493 | 91AH8444 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 1200V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 1.2Kv, 98A, 175Deg C, 468W Rohs Compliant Onsemi | Sic Mosfet, N-Ch, 20V, 98A, To-263; Mosfet Module Configuration Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | |||||
| V(BR)DSS | 1200 volts | ||||||
| IDSS | 8600 milliamps | 98000 milliamps |
