onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB75N06T4G NTB75N06T4G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 129113-NTB75N06T4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Family Name: NTB75N06 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 75A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 130nC @ 10V Max Input Capacitance: 4510pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 37.5A, 10V Alternative Parts (Cross-Reference): FS70VS-06; STB80NE06-10; AP95T06GS; AP95T06GS-HF; Introduction Date: April 05, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 129113-NTB75N06T4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Family Name: NTB75N06 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 75A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 130nC @ 10V Max Input Capacitance: 4510pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 37.5A, 10V Alternative Parts (Cross-Reference): FS70VS-06; STB80NE06-10; AP95T06GS; AP95T06GS-HF; Introduction Date: April 05, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB75N06T4G - 129113-NTB75N06T4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB75N06T4G
129113-NTB75N06T4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB75N06T4G 129113-NTB75N06T4G
Manufacturer: ON Semiconductor Win Source Part Number: 129113-NTB75N06T4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Family Name: NTB75N06 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 75A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 130nC @ 10V Max Input Capacitance: 4510pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 37.5A, 10V Alternative Parts (Cross-Reference): FS70VS-06; STB80NE06-10; AP95T06GS; AP95T06GS-HF; Introduction Date: April 05, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 129113-NTB75N06T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Family Name: NTB75N06
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 75A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 4510pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 37.5A, 10V
Alternative Parts (Cross-Reference): FS70VS-06; STB80NE06-10; AP95T06GS; AP95T06GS-HF;
Introduction Date: April 05, 2001
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - NTB75N06T4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTB75N06T4GOSTR-ND
Single FETs, MOSFETs NTB75N06T4GOSTR-ND
N-Channel 60V 75A (Ta) 2.4W (Ta), 214W (Tj) Surface Mount D²PAK

N-Channel 60V 75A (Ta) 2.4W (Ta), 214W (Tj) Surface Mount D²PAK

Buy Now Datasheet
Singapore
N-Channel 60V 75A 9.5 mOhm MOSFET Transistor
278-NTB75N06T4G
N-Channel 60V 75A 9.5 mOhm MOSFET Transistor 278-NTB75N06T4G
Power MOSFET 60V 75A 9.5 mOhm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL Product overview: NTB75N06T4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 75A, 9.5 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 75A, 9.5 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB75N06T4G can be used for catalog matching and distributor lookup.

Power MOSFET 60V 75A 9.5 mOhm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL Product overview: NTB75N06T4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 75A, 9.5 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 75A, 9.5 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTB75N06T4G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTB75N06T4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTB75N06T4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTB75N06T4G
MOSFET N-CH 60V 75A D2PAK

MOSFET N-CH 60V 75A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 129113-NTB75N06T4G NTB75N06T4GOSTR-ND 278-NTB75N06T4G NTB75N06T4G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTB75N06T4G Single FETs, MOSFETs N-Channel 60V 75A 9.5 mOhm MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 2400 to 214000 milliwatts 214000 milliwatts
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